Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a f...

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Bibliographic Details
Main Authors:	Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, Mitch M. C. Chou, D. M. Schaadt
Format:	Article
Language:	English
Published:	Hindawi-Wiley 2017-01-01
Series:	Scanning
Online Access:	http://dx.doi.org/10.1155/2017/2362084

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