Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates
M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a f...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi-Wiley
2017-01-01
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| Series: | Scanning |
| Online Access: | http://dx.doi.org/10.1155/2017/2362084 |