GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration pro...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-03-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/19/5/1051 |