A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

A compact drain current model is developed for an asymmetric, dual gate, monolayer 2 - D Transition metal dichalcogenide (TMD) field effect transistor (FET) in the subthreshold region. The work includes the effect of source to drain tunneling and gate dielectric fringing effects. The model is system...

Full description

Bibliographic Details
Main Authors: Niraj Kumar Singh, Monika Kumari, Manodipan Sahoo
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
2-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">D</italic>
TMD
FET
fringing effect
NEGF
drift-diffusion
Online Access:https://ieeexplore.ieee.org/document/9261494/

Internet

https://ieeexplore.ieee.org/document/9261494/

Similar Items