Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique

Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique

The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the tra...

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Bibliographic Details
Main Authors: J. Jesús Cruz Bueno, Godofredo García Salgado, R. Fabiola Balderas Valadez, J. Alberto Luna López, F. Gabriela Nieto Caballero, Tomás Díaz Becerril, Enrique Rosendo Andrés, Antonio Coyopol Solís, Román Romano Trujillo, Crisóforo Morales Ruiz, J. Miguel Gracia Jiménez, Reina Galeazzi Isasmendi
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Crystals
Subjects:
CSVT
HFCVD
GaAs
films
Online Access:https://www.mdpi.com/2073-4352/9/2/68

Internet

https://www.mdpi.com/2073-4352/9/2/68

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