Damage Effect of ALD-Al<sub>2</sub>O<sub>3</sub> Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Damage Effect of ALD-Al<sub>2</sub>O<sub>3</sub> Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

The radiation response of Al<sub>2</sub>O<sub>3</sub> on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al<sub>2</sub>O<sub>3</sub> based metal-oxide-semiconductor structures were irradiated under gamma-ray wi...

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Bibliographic Details
Main Author: Man Ding
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
aluminum oxide
radiation effect
charge trapping
defects
Online Access:https://www.mdpi.com/2072-666X/12/6/661

Internet

https://www.mdpi.com/2072-666X/12/6/661

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