Implementation of a Low Noise Amplifier With Self-Recovery Capability
In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the...
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8675277/ |
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doaj-857d1f6acd4c46018961cfbf56bb72c72021-04-05T17:02:29ZengIEEEIEEE Access2169-35362019-01-017430764308310.1109/ACCESS.2019.29075248675277Implementation of a Low Noise Amplifier With Self-Recovery CapabilityYanchen Liu0https://orcid.org/0000-0001-7314-111XCaizhi Zhang1Tupei Chen2Deyu Kong3https://orcid.org/0000-0002-9730-3854Rui Guo4https://orcid.org/0000-0001-6751-7272J. J. Wang5Yuancong Wu6S. G. Hu7https://orcid.org/0000-0003-2273-5449L. M. Rong8Qi Yu9Yang Liu10https://orcid.org/0000-0003-0615-7036State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaIn this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated.https://ieeexplore.ieee.org/document/8675277/LNAHCIself-recoveryself-monitoringbuilt-in compensationdegradation model |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Yanchen Liu Caizhi Zhang Tupei Chen Deyu Kong Rui Guo J. J. Wang Yuancong Wu S. G. Hu L. M. Rong Qi Yu Yang Liu |
| spellingShingle |
Yanchen Liu Caizhi Zhang Tupei Chen Deyu Kong Rui Guo J. J. Wang Yuancong Wu S. G. Hu L. M. Rong Qi Yu Yang Liu Implementation of a Low Noise Amplifier With Self-Recovery Capability IEEE Access LNA HCI self-recovery self-monitoring built-in compensation degradation model |
| author_facet |
Yanchen Liu Caizhi Zhang Tupei Chen Deyu Kong Rui Guo J. J. Wang Yuancong Wu S. G. Hu L. M. Rong Qi Yu Yang Liu |
| author_sort |
Yanchen Liu |
| title |
Implementation of a Low Noise Amplifier With Self-Recovery Capability |
| title_short |
Implementation of a Low Noise Amplifier With Self-Recovery Capability |
| title_full |
Implementation of a Low Noise Amplifier With Self-Recovery Capability |
| title_fullStr |
Implementation of a Low Noise Amplifier With Self-Recovery Capability |
| title_full_unstemmed |
Implementation of a Low Noise Amplifier With Self-Recovery Capability |
| title_sort |
implementation of a low noise amplifier with self-recovery capability |
| publisher |
IEEE |
| series |
IEEE Access |
| issn |
2169-3536 |
| publishDate |
2019-01-01 |
| description |
In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated. |
| topic |
LNA HCI self-recovery self-monitoring built-in compensation degradation model |
| url |
https://ieeexplore.ieee.org/document/8675277/ |
| work_keys_str_mv |
AT yanchenliu implementationofalownoiseamplifierwithselfrecoverycapability AT caizhizhang implementationofalownoiseamplifierwithselfrecoverycapability AT tupeichen implementationofalownoiseamplifierwithselfrecoverycapability AT deyukong implementationofalownoiseamplifierwithselfrecoverycapability AT ruiguo implementationofalownoiseamplifierwithselfrecoverycapability AT jjwang implementationofalownoiseamplifierwithselfrecoverycapability AT yuancongwu implementationofalownoiseamplifierwithselfrecoverycapability AT sghu implementationofalownoiseamplifierwithselfrecoverycapability AT lmrong implementationofalownoiseamplifierwithselfrecoverycapability AT qiyu implementationofalownoiseamplifierwithselfrecoverycapability AT yangliu implementationofalownoiseamplifierwithselfrecoverycapability |
| _version_ |
1721540379108442112 |