Implementation of a Low Noise Amplifier With Self-Recovery Capability

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the...

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Bibliographic Details
Main Authors: Yanchen Liu, Caizhi Zhang, Tupei Chen, Deyu Kong, Rui Guo, J. J. Wang, Yuancong Wu, S. G. Hu, L. M. Rong, Qi Yu, Yang Liu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
LNA
HCI
Online Access:https://ieeexplore.ieee.org/document/8675277/