Implementation of a Low Noise Amplifier With Self-Recovery Capability

• Main Authors: Yanchen Liu, Caizhi Zhang, Tupei Chen, Deyu Kong, Rui Guo, J. J. Wang, Yuancong Wu, S. G. Hu, L. M. Rong, Qi Yu, Yang Liu
• Format: Article
• Language: English
• Published: IEEE 2019-01-01
• Series: IEEE Access
• Subjects: LNA; HCI; self-recovery; self-monitoring; built-in compensation; degradation model
• Online Access: https://ieeexplore.ieee.org/document/8675277/
• ISSN: 2169-3536

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated.