Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Integrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, i...

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Main Authors: Jiamian Sun, Haiwang Li, Sifan Wu, Tiantong Xu, Hanqing Li, Hanxiao Wu, Shuangzhi Xia
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Micromachines
Subjects:
lumped-element parameter extraction
microelectromechanical systems (MEMS)
in-chip solenoid inductor
physics-based equivalent circuit model
Online Access:https://www.mdpi.com/2072-666X/11/9/836
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spelling doaj-85316353a8df468c8748eb1234016bf12020-11-25T01:24:15ZengMDPI AGMicromachines2072-666X2020-09-011183683610.3390/mi11090836Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit ModelJiamian Sun0Haiwang Li1Sifan Wu2Tiantong Xu3Hanqing Li4Hanxiao Wu5Shuangzhi Xia6School of Energy and Power Engineering, Beihang University, Beijing 100191, ChinaSchool of Energy and Power Engineering, Beihang University, Beijing 100191, ChinaSchool of Energy and Power Engineering, Beihang University, Beijing 100191, ChinaNational Key Laboratory of Science and Technology on Aero-Engine Aero-thermodynamics, Beihang University, Beijing 100191, ChinaMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Boston, MA 02139, USASchool of Energy and Power Engineering, Beihang University, Beijing 100191, ChinaNew Era Engineering Consulting Co., Ltd., Beijing 100088, ChinaIntegrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, is inadequate. This type of inductor can thus not be incorporated into fast computer-aided design (CAD)-assisted circuit design. In this study, we propose a broadband two-port physics-based equivalent circuit model for 3D microelectromechanical system (MEMS) in-chip solenoid inductors that are embedded in silicon substrates. The circuit model was composed of lumped elements with specific physical meanings and incorporated complicated parasitics resulting from eddy currents, skin effects, and proximity effects. Based on this model, we presented a lumped-element parameter extraction method using the electronic design automation software package, Agilent Advanced Design System (ADS). This method proved to be consistent with the results of two-port testing at low to self-resonant frequencies and could thus be used in CAD-assisted circuit design. The lumped element value variations were analyzed based on the physical meaning of the elements with respect to variations in structures and the substrate resistivity of inductors. This provided a novel perspective in terms of the design of integrated in-chip solenoid inductors.https://www.mdpi.com/2072-666X/11/9/836lumped-element parameter extractionmicroelectromechanical systems (MEMS)in-chip solenoid inductorphysics-based equivalent circuit model
collection DOAJ
language English
format Article
sources DOAJ
author Jiamian Sun
Haiwang Li
Sifan Wu
Tiantong Xu
Hanqing Li
Hanxiao Wu
Shuangzhi Xia
spellingShingle Jiamian Sun
Haiwang Li
Sifan Wu
Tiantong Xu
Hanqing Li
Hanxiao Wu
Shuangzhi Xia
Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
Micromachines
lumped-element parameter extraction
microelectromechanical systems (MEMS)
in-chip solenoid inductor
physics-based equivalent circuit model
author_facet Jiamian Sun
Haiwang Li
Sifan Wu
Tiantong Xu
Hanqing Li
Hanxiao Wu
Shuangzhi Xia
author_sort Jiamian Sun
title Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
title_short Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
title_full Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
title_fullStr Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
title_full_unstemmed Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model
title_sort broadband lumped-element parameter extraction method of two-port 3d mems in-chip solenoid inductors based on a physics-based equivalent circuit model
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2020-09-01
description Integrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, is inadequate. This type of inductor can thus not be incorporated into fast computer-aided design (CAD)-assisted circuit design. In this study, we propose a broadband two-port physics-based equivalent circuit model for 3D microelectromechanical system (MEMS) in-chip solenoid inductors that are embedded in silicon substrates. The circuit model was composed of lumped elements with specific physical meanings and incorporated complicated parasitics resulting from eddy currents, skin effects, and proximity effects. Based on this model, we presented a lumped-element parameter extraction method using the electronic design automation software package, Agilent Advanced Design System (ADS). This method proved to be consistent with the results of two-port testing at low to self-resonant frequencies and could thus be used in CAD-assisted circuit design. The lumped element value variations were analyzed based on the physical meaning of the elements with respect to variations in structures and the substrate resistivity of inductors. This provided a novel perspective in terms of the design of integrated in-chip solenoid inductors.
topic lumped-element parameter extraction
microelectromechanical systems (MEMS)
in-chip solenoid inductor
physics-based equivalent circuit model
url https://www.mdpi.com/2072-666X/11/9/836
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