N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH3 plasma immersion. During the treatment, NH3 plasma radicals not only flatten...

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Bibliographic Details
Main Authors: Bo Liu, Chia-Ming Yang, Zhiwei Liu, Chao-Sung Lai
Format: Article
Language:English
Published: MDPI AG 2017-09-01
Series:Nanomaterials
Subjects:
solid source doping technique
CVD
N-doped graphene
low defects
field-effect transistors
Online Access:https://www.mdpi.com/2079-4991/7/10/302

Internet

https://www.mdpi.com/2079-4991/7/10/302

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