Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease o...

Full description

Bibliographic Details
Main Authors: Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, Kuo-Pin Chiu, Ji-Lin Shen, Ting-Chun Wang, Hao-Chung Kuo, Ching-Hsueh Chiu, Yung-Chi Yao, Ya-Ju Lee
Format: Article
Language:English
Published: Nature Publishing Group 2017-08-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-07483-3

Internet

https://doi.org/10.1038/s41598-017-07483-3

Similar Items