A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

This paper describes an ultracompact GaN 3 × 3 matrix power converter with drive-by-microwave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with co-integrated RF rectifiers, novel isolat...

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Bibliographic Details
Main Authors: Shuichi Nagai, Yasuhiro Yamada, Noboru Negoro, Hiroyuki Handa, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gallium nitride
driver circuits
power integrated circuits
power semiconductor switches
matrix power converter
microwave circuits
Online Access:https://ieeexplore.ieee.org/document/6933888/

Internet

https://ieeexplore.ieee.org/document/6933888/

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