Semiconductor-enhanced Raman scattering sensors via quasi-three-dimensional Au/Si/Au structures
We present a feasible way to strongly enhance Raman signals via introducing an ultra-thin dielectric film in the dual-layer plasmonic hotspots structure, which forms a quasi-three-dimensional structure. The Raman intensity was obtained with an enhancement factor of 735% for the dual-layer metal stru...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2019-05-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2019-0078 |