CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES

Purpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting fi...

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Main Authors: Зверев Николай Витальевич, Зотов Александр Александрович, Юшканов Александр Алексеевич
Format: Article
Language:Russian
Published: Moscow Region State University Editorial Office 2020-07-01
Series:Вестник московского государственного областного университета. Серия: Физика-математика
Subjects:
Online Access:http://vestnik-mgou.ru/Articles/View/13776
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spelling doaj-82f6f83de86e413085be679be88702be2020-11-25T03:42:46ZrusMoscow Region State University Editorial OfficeВестник московского государственного областного университета. Серия: Физика-математика2310-72512020-07-01281810.18384/2310-7251-2020-2-8-18CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCESЗверев Николай ВитальевичЗотов Александр АлександровичЮшканов Александр АлексеевичPurpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting film are studied and analyzed by using theoretical relations taking into account the dielectric permittivity of the conduction electron plasma. Results. A method for measuring the characteristics of thin conducting films by plasmon resonances is proposed and described. The features of plasma resonances are investigated. The relationship between the frequencies of plasmon resonances and the characteristics of a thin conducting film, such as its thickness and temperature, is shown, which makes it possible to measure the characteristics of the film using these resonant frequencies. Conditions for the film thickness measured by this method are obtained. An estimate is given for the frequency difference of plasmon resonances. Theoretical and practical implications. The proposed method for measuring the characteristics of thin conducting films can be used in microelectronics to control the parameters of integrated circuits, in optics to determine the thickness of thin layers of optical structures, and in industry to control thin film coatings.http://vestnik-mgou.ru/Articles/View/13776optical coefficientsnanofilmelectron plasmaplasmon resonance
collection DOAJ
language Russian
format Article
sources DOAJ
author Зверев Николай Витальевич
Зотов Александр Александрович
Юшканов Александр Алексеевич
spellingShingle Зверев Николай Витальевич
Зотов Александр Александрович
Юшканов Александр Алексеевич
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
Вестник московского государственного областного университета. Серия: Физика-математика
optical coefficients
nanofilm
electron plasma
plasmon resonance
author_facet Зверев Николай Витальевич
Зотов Александр Александрович
Юшканов Александр Алексеевич
author_sort Зверев Николай Витальевич
title CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
title_short CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
title_full CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
title_fullStr CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
title_full_unstemmed CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
title_sort characteristics of a thin conductive film by plasmon resonances
publisher Moscow Region State University Editorial Office
series Вестник московского государственного областного университета. Серия: Физика-математика
issn 2310-7251
publishDate 2020-07-01
description Purpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting film are studied and analyzed by using theoretical relations taking into account the dielectric permittivity of the conduction electron plasma. Results. A method for measuring the characteristics of thin conducting films by plasmon resonances is proposed and described. The features of plasma resonances are investigated. The relationship between the frequencies of plasmon resonances and the characteristics of a thin conducting film, such as its thickness and temperature, is shown, which makes it possible to measure the characteristics of the film using these resonant frequencies. Conditions for the film thickness measured by this method are obtained. An estimate is given for the frequency difference of plasmon resonances. Theoretical and practical implications. The proposed method for measuring the characteristics of thin conducting films can be used in microelectronics to control the parameters of integrated circuits, in optics to determine the thickness of thin layers of optical structures, and in industry to control thin film coatings.
topic optical coefficients
nanofilm
electron plasma
plasmon resonance
url http://vestnik-mgou.ru/Articles/View/13776
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