CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES
Purpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting fi...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Moscow Region State University Editorial Office
2020-07-01
|
Series: | Вестник московского государственного областного университета. Серия: Физика-математика |
Subjects: | |
Online Access: | http://vestnik-mgou.ru/Articles/View/13776 |
id |
doaj-82f6f83de86e413085be679be88702be |
---|---|
record_format |
Article |
spelling |
doaj-82f6f83de86e413085be679be88702be2020-11-25T03:42:46ZrusMoscow Region State University Editorial OfficeВестник московского государственного областного университета. Серия: Физика-математика2310-72512020-07-01281810.18384/2310-7251-2020-2-8-18CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCESЗверев Николай ВитальевичЗотов Александр АлександровичЮшканов Александр АлексеевичPurpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting film are studied and analyzed by using theoretical relations taking into account the dielectric permittivity of the conduction electron plasma. Results. A method for measuring the characteristics of thin conducting films by plasmon resonances is proposed and described. The features of plasma resonances are investigated. The relationship between the frequencies of plasmon resonances and the characteristics of a thin conducting film, such as its thickness and temperature, is shown, which makes it possible to measure the characteristics of the film using these resonant frequencies. Conditions for the film thickness measured by this method are obtained. An estimate is given for the frequency difference of plasmon resonances. Theoretical and practical implications. The proposed method for measuring the characteristics of thin conducting films can be used in microelectronics to control the parameters of integrated circuits, in optics to determine the thickness of thin layers of optical structures, and in industry to control thin film coatings.http://vestnik-mgou.ru/Articles/View/13776optical coefficientsnanofilmelectron plasmaplasmon resonance |
collection |
DOAJ |
language |
Russian |
format |
Article |
sources |
DOAJ |
author |
Зверев Николай Витальевич Зотов Александр Александрович Юшканов Александр Алексеевич |
spellingShingle |
Зверев Николай Витальевич Зотов Александр Александрович Юшканов Александр Алексеевич CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES Вестник московского государственного областного университета. Серия: Физика-математика optical coefficients nanofilm electron plasma plasmon resonance |
author_facet |
Зверев Николай Витальевич Зотов Александр Александрович Юшканов Александр Алексеевич |
author_sort |
Зверев Николай Витальевич |
title |
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES |
title_short |
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES |
title_full |
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES |
title_fullStr |
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES |
title_full_unstemmed |
CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES |
title_sort |
characteristics of a thin conductive film by plasmon resonances |
publisher |
Moscow Region State University Editorial Office |
series |
Вестник московского государственного областного университета. Серия: Физика-математика |
issn |
2310-7251 |
publishDate |
2020-07-01 |
description |
Purpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting film are studied and analyzed by using theoretical relations taking into account the dielectric permittivity of the conduction electron plasma. Results. A method for measuring the characteristics of thin conducting films by plasmon resonances is proposed and described. The features of plasma resonances are investigated. The relationship between the frequencies of plasmon resonances and the characteristics of a thin conducting film, such as its thickness and temperature, is shown, which makes it possible to measure the characteristics of the film using these resonant frequencies. Conditions for the film thickness measured by this method are obtained. An estimate is given for the frequency difference of plasmon resonances. Theoretical and practical implications. The proposed method for measuring the characteristics of thin conducting films can be used in microelectronics to control the parameters of integrated circuits, in optics to determine the thickness of thin layers of optical structures, and in industry to control thin film coatings. |
topic |
optical coefficients nanofilm electron plasma plasmon resonance |
url |
http://vestnik-mgou.ru/Articles/View/13776 |
work_keys_str_mv |
AT zverevnikolajvitalʹevič characteristicsofathinconductivefilmbyplasmonresonances AT zotovaleksandraleksandrovič characteristicsofathinconductivefilmbyplasmonresonances AT ûškanovaleksandralekseevič characteristicsofathinconductivefilmbyplasmonresonances |
_version_ |
1724523712628129792 |