Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor
Abstract In this work, a low leakage current ZrO2 was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO2 were prepared to investigate the film formation process and electrical performance fo...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-03-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-2905-2 |