Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxi...

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Bibliographic Details
Main Authors: Jeong-S. Moon, Michael Fritze, Jonathan R. Ahlbin, Michael Bajura, Ivan S. Esqueda, Cory D. Cress, Travis J. Anderson
Format: Article
Language:English
Published: MDPI AG 2013-07-01
Series:Electronics
Subjects:
graphene
field-effect-transistors (FETs)
total ionizing dose (TID)
radiation
conductivity
mobility
Online Access:http://www.mdpi.com/2079-9292/2/3/234

Internet

http://www.mdpi.com/2079-9292/2/3/234

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