Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture

Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture

A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (<i>a</i>-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals t...

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Bibliographic Details
Main Authors:	Kyung-Tae Kim, Seung-Han Kang, Seung-Ji Nam, Chan-Yong Park, Jeong-Wan Jo, Jae-Sang Heo, Sung-Kyu Park
Format:	Article
Language:	English
Published:	MDPI AG 2021-06-01
Series:	Applied Sciences
Subjects:	amorphous oxide semiconductors a-IGZO TFTs stretchable electronics finite-element analysis skin compatible electronics conformable robotics
Online Access:	https://www.mdpi.com/2076-3417/11/12/5501

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