Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture

Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture

A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (<i>a</i>-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals t...

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Bibliographic Details
Main Authors: Kyung-Tae Kim, Seung-Han Kang, Seung-Ji Nam, Chan-Yong Park, Jeong-Wan Jo, Jae-Sang Heo, Sung-Kyu Park
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Applied Sciences
Subjects:
amorphous oxide semiconductors
a-IGZO TFTs
stretchable electronics
finite-element analysis
skin compatible electronics
conformable robotics
Online Access:https://www.mdpi.com/2076-3417/11/12/5501

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https://www.mdpi.com/2076-3417/11/12/5501

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