Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires

Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires

A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnec...

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Main Authors: Phillip M. Wu, Lars Samuelson, Heiner Linke
Format: Article
Language:English
Published: Hindawi Limited 2011-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2011/268149
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spelling doaj-808f0b7cec3e4f00a2f8d6087c21574a2020-11-24T22:29:49ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292011-01-01201110.1155/2011/268149268149Toward 3D Integration of 1D Conductors: Junctions of InAs NanowiresPhillip M. Wu0Lars Samuelson1Heiner Linke2Division of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenA vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.http://dx.doi.org/10.1155/2011/268149
collection DOAJ
language English
format Article
sources DOAJ
author Phillip M. Wu
Lars Samuelson
Heiner Linke
spellingShingle Phillip M. Wu
Lars Samuelson
Heiner Linke
Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
Journal of Nanomaterials
author_facet Phillip M. Wu
Lars Samuelson
Heiner Linke
author_sort Phillip M. Wu
title Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
title_short Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
title_full Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
title_fullStr Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
title_full_unstemmed Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
title_sort toward 3d integration of 1d conductors: junctions of inas nanowires
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2011-01-01
description A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.
url http://dx.doi.org/10.1155/2011/268149
work_keys_str_mv AT phillipmwu toward3dintegrationof1dconductorsjunctionsofinasnanowires
AT larssamuelson toward3dintegrationof1dconductorsjunctionsofinasnanowires
AT heinerlinke toward3dintegrationof1dconductorsjunctionsofinasnanowires
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