Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

<p>Abstract</p><p>Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-...

Full description

Bibliographic Details
Main Authors: Yoon SF, Liu CY, Sun ZZ, Yew KC
Format: Article
Language:English
Published: SpringerOpen 2006-01-01
Series:Nanoscale Research Letters
Subjects:
GaInNAs
Quantum dot
Laser diodes
Molecular beam epitaxy (MBE)
Online Access:http://dx.doi.org/10.1007/s11671-006-9009-5

Internet

http://dx.doi.org/10.1007/s11671-006-9009-5

Similar Items