High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Diamond is a wide bandgap semiconductor that can work at high temperatures and resist very high electric fields. It endures harsh environments through its physical stability and conducts heat very well. These properties make diamond suitable for the fabrication of unique electronic devices. In parti...

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Bibliographic Details
Main Authors: Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5055812

Internet

http://dx.doi.org/10.1063/1.5055812

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