Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress
This paper proposes a poststress time evolution model for sub-10-nm thick SiO2 films for degradation prediction and the extraction of trap-related parameters. The model is based on the understanding that the degradation in thin SiO2 films continues within the unstressed interval. The phenomenon is...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/909523 |