Analytical Model and Fringing-Field Parasitics of Carrier-Depletion Silicon-on-Insulator Optical Modulation Diodes

• Main Authors: Hasitha Jayatilleka, Wesley D. Sacher, Joyce K. S. Poon
• Format: Article
• Language: English
• Published: IEEE 2013-01-01
• Series: IEEE Photonics Journal
• Subjects: Silicon photonics; <formula formulatype="inline"><tex Notation="TeX">$pn$</tex></formula> junctions; optical modulators; analytical modeling
• Online Access: https://ieeexplore.ieee.org/document/6413159/

We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral <i>pn</i> junction and can be extended to other geometries, such as vertical and interdigitated junctions. The model is used to identify the waveguide slab to rib height ratio as a key geometric scaling parameter for the modulation efficiency and bandwidth for lateral diodes. The fringe capacitance is a parasitic effect that leads to a decrease of about 20% in the modulation bandwidth of typical SOI diodes without a corresponding increase in the modulation efficiency. From the scaling relations, the most effective way to increase the modulation bandwidth is to reduce the series resistance of the diode.