Analytical Model and Fringing-Field Parasitics of Carrier-Depletion Silicon-on-Insulator Optical Modulation Diodes
We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral <i>pn</i> junction and can be extended to other geometries, such as vertical and interdi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6413159/ |