Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal im...

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Bibliographic Details
Main Authors: Bisewski Damian, Myśliwiec Marcin, Górecki Krzysztof, Kisiel Ryszard, Zarębski Janusz
Format: Article
Language:English
Published: Polish Academy of Sciences 2016-09-01
Series:Metrology and Measurement Systems
Subjects:
Schottky diodes
transient thermal impedance
thermal measurements
silicon carbide
packaging
Online Access:http://www.degruyter.com/view/j/mms.2016.23.issue-3/mms-2016-0033/mms-2016-0033.xml?format=INT

Internet

http://www.degruyter.com/view/j/mms.2016.23.issue-3/mms-2016-0033/mms-2016-0033.xml?format=INT

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