Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Abstract Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx bi-layer structure by using a low-temperature annealing process. The addition o...

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Bibliographic Details
Main Authors: Jie Yu, Xiaoxin Xu, Tiancheng Gong, Qing Luo, Danian Dong, Peng Yuan, Lu Tai, Jiahao Yin, Xi Zhu, Xiulong Wu, Hangbing Lv, Ming Liu
Format: Article
Language:English
Published: SpringerOpen 2019-03-01
Series:Nanoscale Research Letters
Subjects:
Conductive bridge resistive switching memory (CBRAM)
CMOS-compatible process
Bi-layer structure
Reliability
Online Access:http://link.springer.com/article/10.1186/s11671-019-2942-x

Internet

http://link.springer.com/article/10.1186/s11671-019-2942-x

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