Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method

The purpose of this research is to develop an optimal method for synthesizing of nanocrystalline Al2O3 monolayers at high growth rates on cemented carbides coated with an intermediate layer of pre-Al2O3-C (composite layers Al2O3-C/Al2O3). The use of quartz glass substrate allows for obtaining inform...

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Main Authors: Sawka A., Kwatera A.
Format: Article
Language:English
Published: Polish Academy of Sciences 2015-06-01
Series:Archives of Metallurgy and Materials
Subjects:
Online Access:http://www.degruyter.com/view/j/amm.2015.60.issue-2/amm-2015-0269/amm-2015-0269.xml?format=INT
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spelling doaj-7de869d69dcd4a6c91ddc2e78ccbf4a32020-11-25T02:50:13ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092015-06-016021121112410.1515/amm-2015-0269amm-2015-0269Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD MethodSawka A.0Kwatera A.1 AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY, FACULTY OF MATERIALS SCIENCE AND CERAMICS, DEPARTMENT OF CERAMICS AND REFRACTORIES, AL. A. MICKIEWICZA 30, 30-059 KRAKÓW, POLAND AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY, FACULTY OF MATERIALS SCIENCE AND CERAMICS, DEPARTMENT OF CERAMICS AND REFRACTORIES, AL. A. MICKIEWICZA 30, 30-059 KRAKÓW, POLANDThe purpose of this research is to develop an optimal method for synthesizing of nanocrystalline Al2O3 monolayers at high growth rates on cemented carbides coated with an intermediate layer of pre-Al2O3-C (composite layers Al2O3-C/Al2O3). The use of quartz glass substrate allows for obtaining information about the quality of the layers such the thickness and density, because of its high transparency. The Al2O3 layers that do not containing carbon were synthesized on quartz glass by MOCVD using aluminum acetylacetonate and air as the reactants at temperatures of 700-1000°C. Argon was also a carrier gas. The resulting layers were transparent, as homogeneous nucleation did not occur during the synthesis process. The layers synthesized at lower temperatures were subjected to a crystallization process at temperatures above 900°C. The crystallization process was studied as a function of time and temperature. The obtained layers were characterized by their nanocrystalline microstructure.http://www.degruyter.com/view/j/amm.2015.60.issue-2/amm-2015-0269/amm-2015-0269.xml?format=INTMOCVD methodcomposite layers Al2O3-C/Al2O3cutting tools
collection DOAJ
language English
format Article
sources DOAJ
author Sawka A.
Kwatera A.
spellingShingle Sawka A.
Kwatera A.
Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
Archives of Metallurgy and Materials
MOCVD method
composite layers Al2O3-C/Al2O3
cutting tools
author_facet Sawka A.
Kwatera A.
author_sort Sawka A.
title Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
title_short Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
title_full Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
title_fullStr Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
title_full_unstemmed Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method
title_sort model research on deposition of pure aluminium oxide layers by mocvd method
publisher Polish Academy of Sciences
series Archives of Metallurgy and Materials
issn 2300-1909
publishDate 2015-06-01
description The purpose of this research is to develop an optimal method for synthesizing of nanocrystalline Al2O3 monolayers at high growth rates on cemented carbides coated with an intermediate layer of pre-Al2O3-C (composite layers Al2O3-C/Al2O3). The use of quartz glass substrate allows for obtaining information about the quality of the layers such the thickness and density, because of its high transparency. The Al2O3 layers that do not containing carbon were synthesized on quartz glass by MOCVD using aluminum acetylacetonate and air as the reactants at temperatures of 700-1000°C. Argon was also a carrier gas. The resulting layers were transparent, as homogeneous nucleation did not occur during the synthesis process. The layers synthesized at lower temperatures were subjected to a crystallization process at temperatures above 900°C. The crystallization process was studied as a function of time and temperature. The obtained layers were characterized by their nanocrystalline microstructure.
topic MOCVD method
composite layers Al2O3-C/Al2O3
cutting tools
url http://www.degruyter.com/view/j/amm.2015.60.issue-2/amm-2015-0269/amm-2015-0269.xml?format=INT
work_keys_str_mv AT sawkaa modelresearchondepositionofpurealuminiumoxidelayersbymocvdmethod
AT kwateraa modelresearchondepositionofpurealuminiumoxidelayersbymocvdmethod
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