Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics
Condition monitoring (CM) of insulated-gate bipolar transistor (IGBT) modules is significant for improving power converter reliability and reducing the loss caused by IGBT failure. In this paper, we present an advanced method to evaluate the aging condition of an IGBT based on the changes of thermal...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8684837/ |