Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behav...

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Bibliographic Details
Main Authors: M. Z. M. Khan, T. K. Ng, Chi-Sen Lee, D. H. Anjum, D. Cha, P. Bhattacharya, B. S. Ooi
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor lasers
semiconductor quantum dots
quantum dash lasers
self-assembled quantum dot
inhomogeneous broadening
Online Access:https://ieeexplore.ieee.org/document/6557428/

Internet

https://ieeexplore.ieee.org/document/6557428/

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