Improved Device Distribution in High-Performance SiN<sub>x</sub> Resistive Random Access Memory via Arsenic Ion Implantation
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiN<sub>x</sub> RRAM device is realized via arsenic ion (As<sup>+</sup>) implantation. Besides, th...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/6/1401 |