Enhancing Near-Infrared Photodetection Efficiency in SPAD With Silicon Surface Nanostructuration

Enhancing Near-Infrared Photodetection Efficiency in SPAD With Silicon Surface Nanostructuration

We propose a straightforward technique to increase the near-infrared photo-detection efficiency (PDE) in single photon avalanche photodiodes (SPAD) manufactured in CMOS industrial foundries, without any change in the usual semiconductor process flow. The mask used for the photolithography of shallow...

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Bibliographic Details
Main Authors: Laurent Frey, Michel Marty, Severine Andre, Norbert Moussy
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Avalanche photodiodes
CMOS image sensors
CMOS process
nanophotonics
gratings
surface structures
Online Access:https://ieeexplore.ieee.org/document/8304563/

Internet

https://ieeexplore.ieee.org/document/8304563/

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