Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

4H-SiC p-i-n photodiodes with various mesa areas (40 000 &#x03BC;m<sup>2</sup>, 2500 &#x03BC;m<sup>2</sup>, 1600 &#x03BC;m<sup>2</sup>, and 400 &#x03BC;m<sup>2</sup>) have been fabricated. Both C-V and I-V characteristics of the photodi...

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Bibliographic Details
Main Authors: Shuoben Hou, Per-Erik Hellstrom, Carl-Mikael Zetterling, Mikael Ostling
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H-SiC
photodiode
high temperature
scaling
Online Access:https://ieeexplore.ieee.org/document/8240922/

Internet

https://ieeexplore.ieee.org/document/8240922/

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