V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>

Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scann...

Full description

Bibliographic Details
Main Authors:	Krystyna Schneider, Wojciech Maziarz
Format:	Article
Language:	English
Published:	MDPI AG 2018-11-01
Series:	Sensors
Subjects:	vanadium pentoxide thin film reactive sputtering electrical properties nitrogen dioxide gas sensor metal-insulator transition (MIT)
Online Access:	https://www.mdpi.com/1424-8220/18/12/4177

id	doaj-7b082dad49aa4726a277c84dea2bbc9f
record_format	Article
spelling	doaj-7b082dad49aa4726a277c84dea2bbc9f2020-11-24T22:58:24ZengMDPI AGSensors1424-82202018-11-011812417710.3390/s18124177s18124177V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>Krystyna Schneider0Wojciech Maziarz1AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, 30-059 Krakow, PolandAGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, 30-059 Krakow, PolandVanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V<sub>2</sub>O<sub>5</sub> phase. The gas sensing properties of V<sub>2</sub>O<sub>5</sub> thin films were investigated at temperatures from range 410⁻617 K upon NO<sub>2</sub> gas of 4⁻20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.https://www.mdpi.com/1424-8220/18/12/4177vanadium pentoxidethin filmreactive sputteringelectrical propertiesnitrogen dioxidegas sensormetal-insulator transition (MIT)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Krystyna Schneider Wojciech Maziarz
spellingShingle	Krystyna Schneider Wojciech Maziarz V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref> Sensors vanadium pentoxide thin film reactive sputtering electrical properties nitrogen dioxide gas sensor metal-insulator transition (MIT)
author_facet	Krystyna Schneider Wojciech Maziarz
author_sort	Krystyna Schneider
title	V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
title_short	V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
title_full	V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
title_fullStr	V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
title_full_unstemmed	V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
title_sort	v<sub>2</sub>o<sub>5</sub> thin films as nitrogen dioxide sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2018-11-01
description	Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V<sub>2</sub>O<sub>5</sub> phase. The gas sensing properties of V<sub>2</sub>O<sub>5</sub> thin films were investigated at temperatures from range 410⁻617 K upon NO<sub>2</sub> gas of 4⁻20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.
topic	vanadium pentoxide thin film reactive sputtering electrical properties nitrogen dioxide gas sensor metal-insulator transition (MIT)
url	https://www.mdpi.com/1424-8220/18/12/4177
work_keys_str_mv	AT krystynaschneider vsub2subosub5subthinfilmsasnitrogendioxidesensorsxrefridfn1sensors375730reftypefnxref AT wojciechmaziarz vsub2subosub5subthinfilmsasnitrogendioxidesensorsxrefridfn1sensors375730reftypefnxref
_version_	1725647297321107456

V<sub>2</sub>O<sub>5</sub> Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>

Similar Items