A dual‐path high linear amplifier for carrier aggregation
AbstractA 40 nm complementary metal oxide semiconductor carrier‐aggregated drive amplifier with high linearity is presented for sub‐GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Electronics and Telecommunications Research Institute (ETRI)
2020-10-01
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| Series: | ETRI Journal |
| Subjects: | |
| Online Access: | https://doi.org/10.4218/etrij.2020-0121 |