Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor

In this paper we simulated and investigated the device characteristics of a novel device structure derived from the junctionless (JL) gate-all-around (GAA) nanowire (NW) transistor, variable barrier transistor (VBT). Basically, VBT is accomplished by the local constrictions at both ends of the chann...

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Main Authors:	Keng-Ming Liu, Sheng-Hong Liao
Format:	Article
Language:	English
Published:	KeAi Communications Co., Ltd. 2020-01-01
Series:	Solid State Electronics Letters
Subjects:	Variable barrier transistor Junctionless Nanowire TCAD simulation NEGF
Online Access:	http://www.sciencedirect.com/science/article/pii/S2589208820300156

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spelling	doaj-7a4e1fa08aa14b27ac753ac2c9f658632021-04-02T14:07:48ZengKeAi Communications Co., Ltd.Solid State Electronics Letters2589-20882020-01-0124448Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistorKeng-Ming Liu0Sheng-Hong Liao1Corresponding author.; Department of Electrical Engineering, National Dong Hwa University, Hualien, TaiwanDepartment of Electrical Engineering, National Dong Hwa University, Hualien, TaiwanIn this paper we simulated and investigated the device characteristics of a novel device structure derived from the junctionless (JL) gate-all-around (GAA) nanowire (NW) transistor, variable barrier transistor (VBT). Basically, VBT is accomplished by the local constrictions at both ends of the channel region of the JL GAA NW transistor. The device simulation is performed based on the non-equilibrium Green's function (NEGF) approach provided by the 3D TCAD device simulator, Atlas. The simulation results suggest the JL VBT can have larger ON/OFF current ratio than that of the JL GAA NW transistor as long as the constriction (or barrier) is properly designed.http://www.sciencedirect.com/science/article/pii/S2589208820300156Variable barrier transistorJunctionlessNanowireTCAD simulationNEGF
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Keng-Ming Liu Sheng-Hong Liao
spellingShingle	Keng-Ming Liu Sheng-Hong Liao Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor Solid State Electronics Letters Variable barrier transistor Junctionless Nanowire TCAD simulation NEGF
author_facet	Keng-Ming Liu Sheng-Hong Liao
author_sort	Keng-Ming Liu
title	Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
title_short	Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
title_full	Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
title_fullStr	Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
title_full_unstemmed	Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
title_sort	investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
publisher	KeAi Communications Co., Ltd.
series	Solid State Electronics Letters
issn	2589-2088
publishDate	2020-01-01
description	In this paper we simulated and investigated the device characteristics of a novel device structure derived from the junctionless (JL) gate-all-around (GAA) nanowire (NW) transistor, variable barrier transistor (VBT). Basically, VBT is accomplished by the local constrictions at both ends of the channel region of the JL GAA NW transistor. The device simulation is performed based on the non-equilibrium Green's function (NEGF) approach provided by the 3D TCAD device simulator, Atlas. The simulation results suggest the JL VBT can have larger ON/OFF current ratio than that of the JL GAA NW transistor as long as the constriction (or barrier) is properly designed.
topic	Variable barrier transistor Junctionless Nanowire TCAD simulation NEGF
url	http://www.sciencedirect.com/science/article/pii/S2589208820300156
work_keys_str_mv	AT kengmingliu investigationon10nmchannellengthntypejunctionlessvariablebarriernanowiretransistor AT shenghongliao investigationon10nmchannellengthntypejunctionlessvariablebarriernanowiretransistor
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Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor

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