Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
In this paper we simulated and investigated the device characteristics of a novel device structure derived from the junctionless (JL) gate-all-around (GAA) nanowire (NW) transistor, variable barrier transistor (VBT). Basically, VBT is accomplished by the local constrictions at both ends of the chann...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2020-01-01
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| Series: | Solid State Electronics Letters |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208820300156 |