High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

• Main Authors: Martín Riverola, Francesc Torres, Arantxa Uranga, Núria Barniol
• Format: Article
• Language: English
• Published: MDPI AG 2018-11-01
• Series: Micromachines
• Subjects: MEMS relays; MEMS switches; mechanical relays; CMOS-MEMS; MEMS
• Online Access: https://www.mdpi.com/2072-666X/9/11/579

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.