High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a...

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Bibliographic Details
Main Authors: Martín Riverola, Francesc Torres, Arantxa Uranga, Núria Barniol
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Micromachines
Subjects:
MEMS relays
MEMS switches
mechanical relays
CMOS-MEMS
MEMS
Online Access:https://www.mdpi.com/2072-666X/9/11/579

Internet

https://www.mdpi.com/2072-666X/9/11/579

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