Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of ad...

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Main Authors: Hideki Takeuchi, Robert J. Mears, Robert J. Stephenson, Marek Hytha, Daniel Connelly, Pavel Fastenko, Richard Burton, Nyles W. Cody, Doran Weeks, Dmitri Choutov, Nidhi Agrawal, Suman Datta
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Oxygen-inserted silicon
transient-enhanced diffusion
CMOS
FinFET
Online Access:https://ieeexplore.ieee.org/document/8094923/
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spelling doaj-79e4bf760b024923ad9ffad69e37f5e52021-04-05T16:56:52ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01648148610.1109/JEDS.2017.27696828094923Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon ChannelHideki Takeuchi0https://orcid.org/0000-0001-7501-0287Robert J. Mears1Robert J. Stephenson2Marek Hytha3Daniel Connelly4https://orcid.org/0000-0001-6833-0792Pavel Fastenko5Richard Burton6Nyles W. Cody7Doran Weeks8Dmitri Choutov9Nidhi Agrawal10Suman Datta11Atomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USASynopsys Inc., Mountain View, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAAtomera Inc., Los Gatos, CA, USAMicron Technology Inc., Boise, ID, USAUniversity of Notre Dame, Notre Dame, IN, USAInterstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and 20 nm bulk FinFET devices projected by TCAD are discussed.https://ieeexplore.ieee.org/document/8094923/Oxygen-inserted silicontransient-enhanced diffusionCMOSFinFET
collection DOAJ
language English
format Article
sources DOAJ
author Hideki Takeuchi
Robert J. Mears
Robert J. Stephenson
Marek Hytha
Daniel Connelly
Pavel Fastenko
Richard Burton
Nyles W. Cody
Doran Weeks
Dmitri Choutov
Nidhi Agrawal
Suman Datta
spellingShingle Hideki Takeuchi
Robert J. Mears
Robert J. Stephenson
Marek Hytha
Daniel Connelly
Pavel Fastenko
Richard Burton
Nyles W. Cody
Doran Weeks
Dmitri Choutov
Nidhi Agrawal
Suman Datta
Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
IEEE Journal of the Electron Devices Society
Oxygen-inserted silicon
transient-enhanced diffusion
CMOS
FinFET
author_facet Hideki Takeuchi
Robert J. Mears
Robert J. Stephenson
Marek Hytha
Daniel Connelly
Pavel Fastenko
Richard Burton
Nyles W. Cody
Doran Weeks
Dmitri Choutov
Nidhi Agrawal
Suman Datta
author_sort Hideki Takeuchi
title Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
title_short Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
title_full Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
title_fullStr Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
title_full_unstemmed Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
title_sort punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2018-01-01
description Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and 20 nm bulk FinFET devices projected by TCAD are discussed.
topic Oxygen-inserted silicon
transient-enhanced diffusion
CMOS
FinFET
url https://ieeexplore.ieee.org/document/8094923/
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