Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of ad...

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Bibliographic Details
Main Authors: Hideki Takeuchi, Robert J. Mears, Robert J. Stephenson, Marek Hytha, Daniel Connelly, Pavel Fastenko, Richard Burton, Nyles W. Cody, Doran Weeks, Dmitri Choutov, Nidhi Agrawal, Suman Datta
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Oxygen-inserted silicon
transient-enhanced diffusion
CMOS
FinFET
Online Access:https://ieeexplore.ieee.org/document/8094923/

Internet

https://ieeexplore.ieee.org/document/8094923/

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