Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light

Nonradiative recombination (NRR) centers in n-AlGaN layers of UV-B AlGaN samples with different numbers of superlattice (SL) periods (SLPs), grown on the c-plane sapphire substrate at 1150 °C by the metalorganic chemical vapor deposition technique, have been studied by using below-gap-excitation (BG...

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Bibliographic Details
Main Authors: M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, Hideki Hirayama
Format: Article
Language:English
Published: AIP Publishing LLC 2020-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5134698