Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light
Nonradiative recombination (NRR) centers in n-AlGaN layers of UV-B AlGaN samples with different numbers of superlattice (SL) periods (SLPs), grown on the c-plane sapphire substrate at 1150 °C by the metalorganic chemical vapor deposition technique, have been studied by using below-gap-excitation (BG...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-03-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5134698 |