Improvement of the mathematical model of singlephase halfbridge inverter in statevariable form

Improvement of the mathematical model of singlephase halfbridge inverter in statevariable form

The mathematical model of the insulated-gate bipolar transistor in the IGBT module is improved due to the determination of analytical expressions for dynamic spurious capacitances of the device. The expressions are obtained by analytical differentiation of functions that approximate the dependence o...

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Bibliographic Details
Main Authors:	Sviatoslav Vasylets, Kateryna Vasylets
Format:	Article
Language:	English
Published:	PC Technology Center 2018-07-01
Series:	Eastern-European Journal of Enterprise Technologies
Subjects:	spurious capacitances pulse-width modulation matrix of the main sections state variables graph tree topological equations.
Online Access:	http://journals.uran.ua/eejet/article/view/139853

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