Improvement of the mathematical model of singlephase halfbridge inverter in statevariable form
The mathematical model of the insulated-gate bipolar transistor in the IGBT module is improved due to the determination of analytical expressions for dynamic spurious capacitances of the device. The expressions are obtained by analytical differentiation of functions that approximate the dependence o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
PC Technology Center
2018-07-01
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| Series: | Eastern-European Journal of Enterprise Technologies |
| Subjects: | |
| Online Access: | http://journals.uran.ua/eejet/article/view/139853 |