Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.

Bibliographic Details
Main Authors: Weiwei Lin, Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton, Dafiné Ravelosona
Format: Article
Language:English
Published: Nature Publishing Group 2016-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms13532
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spelling doaj-77814cb13c2b460aa04d7ede3579f4e42021-05-11T10:56:29ZengNature Publishing GroupNature Communications2041-17232016-11-01711610.1038/ncomms13532Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropyWeiwei Lin0Nicolas Vernier1Guillaume Agnus2Karin Garcia3Berthold Ocker4Weisheng Zhao5Eric E. Fullerton6Dafiné Ravelosona7Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Singulus Technologies AGCenter for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Center for Memory and Recording Research, University of California San DiegoCenter for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.https://doi.org/10.1038/ncomms13532
collection DOAJ
language English
format Article
sources DOAJ
author Weiwei Lin
Nicolas Vernier
Guillaume Agnus
Karin Garcia
Berthold Ocker
Weisheng Zhao
Eric E. Fullerton
Dafiné Ravelosona
spellingShingle Weiwei Lin
Nicolas Vernier
Guillaume Agnus
Karin Garcia
Berthold Ocker
Weisheng Zhao
Eric E. Fullerton
Dafiné Ravelosona
Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Nature Communications
author_facet Weiwei Lin
Nicolas Vernier
Guillaume Agnus
Karin Garcia
Berthold Ocker
Weisheng Zhao
Eric E. Fullerton
Dafiné Ravelosona
author_sort Weiwei Lin
title Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
title_short Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
title_full Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
title_fullStr Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
title_full_unstemmed Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
title_sort universal domain wall dynamics under electric field in ta/cofeb/mgo devices with perpendicular anisotropy
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2016-11-01
description Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.
url https://doi.org/10.1038/ncomms13532
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