Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.

Bibliographic Details
Main Authors: Weiwei Lin, Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton, Dafiné Ravelosona
Format: Article
Language:English
Published: Nature Publishing Group 2016-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms13532