Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

<p>Abstract</p> <p>Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant elec...

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Bibliographic Details
Main Authors: Shafi M, Mari RH, Khatab A, Taylor D, Henini M
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Laplace DLTS
Multi-quantum wells
DX centre
Heterostructures
Online Access:http://dx.doi.org/10.1007/s11671-010-9820-x

Internet

http://dx.doi.org/10.1007/s11671-010-9820-x

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