Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si<sub>1−x</sub>Ge<sub>x...

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Main Authors:	Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
Format:	Article
Language:	English
Published:	MDPI AG 2020-12-01
Series:	Sensors
Subjects:	SiGe radiation detectors electron and proton irradiations microwave probed photoconductivity pulsed barrier capacitance transients steady-state photo-ionization spectroscopy
Online Access:	https://www.mdpi.com/1424-8220/20/23/6884

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record_format	Article
spelling	doaj-7760ca8e1c5a42babdb8f2b1aaa62cc42020-12-03T00:01:05ZengMDPI AGSensors1424-82202020-12-01206884688410.3390/s20236884Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe DetectorsTomas Ceponis0Laimonas Deveikis1Stanislau Lastovskii2Leonid Makarenko3Jevgenij Pavlov4Kornelijus Pukas5Vytautas Rumbauskas6Eugenijus Gaubas7Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaLaboratory of Radiation Effects, Scientific-Practical Materials Research Centre of NAS of Belarus, P. Brovki Str. 17, 220072 Minsk, BelarusDepartment of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk, BelarusInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaThe particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si<sub>1−x</sub>Ge<sub>x</sub> structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n<sup>+</sup>p structure.https://www.mdpi.com/1424-8220/20/23/6884SiGeradiation detectorselectron and proton irradiationsmicrowave probed photoconductivitypulsed barrier capacitance transientssteady-state photo-ionization spectroscopy
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tomas Ceponis Laimonas Deveikis Stanislau Lastovskii Leonid Makarenko Jevgenij Pavlov Kornelijus Pukas Vytautas Rumbauskas Eugenijus Gaubas
spellingShingle	Tomas Ceponis Laimonas Deveikis Stanislau Lastovskii Leonid Makarenko Jevgenij Pavlov Kornelijus Pukas Vytautas Rumbauskas Eugenijus Gaubas Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors Sensors SiGe radiation detectors electron and proton irradiations microwave probed photoconductivity pulsed barrier capacitance transients steady-state photo-ionization spectroscopy
author_facet	Tomas Ceponis Laimonas Deveikis Stanislau Lastovskii Leonid Makarenko Jevgenij Pavlov Kornelijus Pukas Vytautas Rumbauskas Eugenijus Gaubas
author_sort	Tomas Ceponis
title	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_short	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_full	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_fullStr	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_full_unstemmed	Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
title_sort	transient electrical and optical characteristics of electron and proton irradiated sige detectors
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2020-12-01
description	The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si<sub>1−x</sub>Ge<sub>x</sub> structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n<sup>+</sup>p structure.
topic	SiGe radiation detectors electron and proton irradiations microwave probed photoconductivity pulsed barrier capacitance transients steady-state photo-ionization spectroscopy
url	https://www.mdpi.com/1424-8220/20/23/6884
work_keys_str_mv	AT tomasceponis transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT laimonasdeveikis transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT stanislaulastovskii transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT leonidmakarenko transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT jevgenijpavlov transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT kornelijuspukas transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT vytautasrumbauskas transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors AT eugenijusgaubas transientelectricalandopticalcharacteristicsofelectronandprotonirradiatedsigedetectors
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Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

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