Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si<sub>1−x</sub>Ge<sub>x...

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Bibliographic Details
Main Authors: Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Sensors
Subjects:
SiGe
radiation detectors
electron and proton irradiations
microwave probed photoconductivity
pulsed barrier capacitance transients
steady-state photo-ionization spectroscopy
Online Access:https://www.mdpi.com/1424-8220/20/23/6884

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https://www.mdpi.com/1424-8220/20/23/6884

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