RRAM Device Models: A Comparative Analysis With Experimental Validation
Resistive Random Access Memories (RRAM) have recently shown outstanding characteristics such as high-scalability, high-speed, high-density, and low-energy operation. A simple and accurate model is crucial for rapid design and verification when using RRAM devices at the circuit level. The appropriate...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8907785/ |